NTMD4820N: Power MOSFET 30V 8.0A 20 mOhm Dual N-Channel SO-8
Power MOSFET 30 V, 8 A, Dual N-Channel, SOIC-8
特性- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- Optimized Gate Charge to Minimize Switching Losses
- Dual SOIC-8 Surface Mount Package Saves Board Space
|
应用- Disk Drives
DC-DC Converters
Printers
|
应用注释 (1)
数据表 (1)
仿真模型 (4)
封装图纸 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NTMD4820NR2G | Active | Pb-free
Halide free | Power MOSFET 30V 8.0A 20 mOhm Dual N-Channel SO-8 | SOIC-8 | 751-07 | 1 | Tape and Reel | 2500 | $0.26 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NTMD4820NR2G | N-Channel | Dual | 30 | 20 | 3 | 8 | 1.28 | | 27 | 20 | 7.7 | | 3.2 | 8 | 940 | 225 | 125 |
