NTMD5838NL: Power MOSFET 40V 8.9A 20 mOhm Dual N-Channel SO-8 Logic Level
Power MOSFET 40 V, 8.9 A, 25 mOhm
特性- Low RDS(on)
- Low Capacitance
- Optimized Gate Charge
- These Devices are PbFree, Halogen Free/BFR Free and are RoHSCompliant
| 优势- Minimize Conduction Loss
- Minimize Driver Losses
- Reduce Switching Losses
- RoHS Compliant
|
仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NTMD5838NLR2G | Active | Pb-free
Halide free | Power MOSFET 40V 8.9A 20 mOhm Dual N-Channel SO-8 Logic Level | SOIC-8 | 751-07 | 1 | Tape and Reel | 2500 | $0.2867 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NTMD5838NLR2G | N-Channel | Dual | 40 | 20 | 3 | 8.9 | 2.1 | | 30.8 | 25 | | | 4 | 10 | 785 | 123 | 90 |
