NTMFS4C03N: Power MOSFET 30V 136A 2.1 mOhm Single N−Channel SO−8FL
Power MOSFET 30V 136A 2.1 mOhm Single N−Channel SO−8FL
特性- Small Footprint (5x6 mm) for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
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仿真模型 (4)
封装图纸 (1)
数据表 (1)
| Document Title | Document ID/Size | Revision | Revision Date |
|---|
| Power MOSFET | NTMFS4C03N/D (119kB) | 0 | Sep, 2014 |
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NTMFS4C03NT1G | Active | Pb-free
Halide free | Power MOSFET 30V 136A 2.1 mOhm Single N−Channel SO−8FL | SO-8FL / DFN-5 | 488AA | 1 | Tape and Reel | 1500 | $0.3467 |
| NTMFS4C03NT3G | Active | Pb-free
Halide free | Power MOSFET 30V 136A 2.1 mOhm Single N−Channel SO−8FL | SO-8FL / DFN-5 | 488AA | 1 | Tape and Reel | 5000 | $0.3467 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NTMFS4C03NT1G | N-Channel | Single | 30 | 20 | 2.2 | 136 | 64 | | 2.8 | 2.1 | 20.8 | 45.2 | 4.7 | 39 | 3071 | 1673 | 67 |
| NTMFS4C03NT3G | N-Channel | Single | 30 | 20 | 2.2 | 136 | 64 | | 2.8 | 2.1 | 20.8 | 45.2 | 4.7 | 39 | 3071 | 1673 | 67 |
