30 V, 80 A, Single N-Channel, SO-8 FL
特性
| 优势
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应用
| 终端产品
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Document Title | Document ID/Size | Revision | Revision Date |
---|---|---|---|
EFFICIENCY SIMULATOR AND MOSFET SELECTOR FOR T6T8 rev3.5 | EFFICIENCY SIMULATOR AND MOSFET SELECTOR FOR T3 AND T6 (4250kB) | 3.5 | May, 2015 |
产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价) | ||
---|---|---|---|---|---|---|---|---|---|
NTMFS4C35NT1G | Active | Pb-free Halide free | Power MOSFET 30V 80A 3.2 mOhm Single N-Channel SO-8FL | SO-8FL / DFN-5 | 488AA | 1 | Tape and Reel | 1500 | $0.2933 |
NTMFS4C35NT3G | Active | Pb-free Halide free | Power MOSFET 30V 80A 3.2 mOhm Single N-Channel SO-8FL | SO-8FL / DFN-5 | 488AA | 1 | Tape and Reel | 5000 | $0.2933 |
Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
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NTMFS4C35NT1G | N-Channel | Single | 30 | 20 | 2.2 | 80 | 33 | 4.2 | 3.2 | 15 | 32.5 | 5.5 | 30 | 2300 | 1097 | 46 | |
NTMFS4C35NT3G | N-Channel | Single | 30 | 20 | 2.2 | 80 | 33 | 4.2 | 3.2 | 15 | 32.5 | 5.5 | 30 | 2300 | 1097 | 46 |