Power MOSFET 25V 334A 0.7 mOhm Single N−Channel SO−8FL with Schottky
特性
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应用
| 终端产品
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Document Title | Document ID/Size | Revision | Revision Date |
---|---|---|---|
EFFICIENCY SIMULATOR AND MOSFET SELECTOR FOR T6T8 rev3.5 | EFFICIENCY SIMULATOR AND MOSFET SELECTOR FOR T3 AND T6 (4250kB) | 3.5 | May, 2015 |
Document Title | Document ID/Size | Revision |
---|---|---|
DFN5 5X6, 1.27P (SO 8FL) | 488AA (29kB) | M |
Document Title | Document ID/Size | Revision | Revision Date |
---|---|---|---|
NTMFS4H01NF.REV0.LIB.LIB | NTMFS4H01NF.rev0.lib (1kB) | 0 | |
NTMFS4H01NF.REV0.SIN.SIN | NTMFS4H01NF.rev0.sin (1kB) | 0 | |
NTMFS4H01NF.REV0.SP2.SP2 | NTMFS4H01NF.rev0.sp2 (1kB) | 0 | |
NTMFS4H01NF.REV0.SP3.SP3 | NTMFS4H01NF.rev0.sp3 (1kB) | 0 |
Document Title | Document ID/Size | Revision | Revision Date |
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25VT6A5VGEVB Bill of Materials ROHS Compliant | 25VT6A5VGEVB_BOM_ROHS (149kB) | 0 | |
25VT6A5VGEVB Evaluation Board User's Manual | EVBUM2227/D (1508kB) | 1 | Apr, 2014 |
25VT6A5VGEVB Gerber Layout Files (Zip Format) | 25VT6A5VGEVB_GERBER (366kB) | 0 | |
25VT6A5VGEVB Schematic | 25VT6A5VGEVB_SCHEMATIC (317kB) | 0 | |
25VT6A5VGEVB Test Procedure | 25VT6A5VGEVB_TEST_PROCEDURE (322kB) | 1 |
Document Title | Document ID/Size | Revision | Revision Date |
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Power MOSFET, Single N−Channel, 25 V, 334 A, SO−8FL | NTMFS4H01NF/D (88kB) | 2 | Jan, 2015 |
产品 | 状况 | Compliance | 简短说明 |
---|---|---|---|
25VT6A5VGEVB | Intro Pending | Pb-free | T6 25V Power MOSFET Evaluation Board |
产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价) | ||
---|---|---|---|---|---|---|---|---|---|
NTMFS4H01NFT1G | Active | Pb-free Halide free | Power MOSFET 25V 334A 0.7 mOhm Single N−Channel SO−8FL with Schottky, 25 V, 334 A, Single N?Channel, SO?8FL | SO-8FL / DFN-5 | 488AA | 1 | Tape and Reel | 1500 | $2.3 |
NTMFS4H01NFT3G | Active | Pb-free Halide free | Power MOSFET 25V 334A 0.7 mOhm Single N−Channel SO−8FL with Schottky, 25 V, 334 A, Single N−Channel, SO−8FL | SO-8FL / DFN-5 | 488AA | 1 | Tape and Reel | 5000 | $2.3 |
Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
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NTMFS4H01NFT1G | N-Channel | with Schottky Diode | 25 | 20 | 2.1 | 334 | 125 | 1 | 0.7 | 37.8 | 8 | 5538 | 3416 | 175.3 | |||
NTMFS4H01NFT3G | N-Channel | with Schottky Diode | 25 | 20 | 2.1 | 334 | 125 | 1 | 0.7 | 37.8 | 8 | 5538 | 3416 | 175.3 |