NTMFS4H02NF: Power MOSFET 25V 193A 1.4 mOhm Single N−Channel SO−8FL with Schottky
Power MOSFET 25V 193A 1.4 mOhm Single N−Channel SO−8FL with Schottky
特性- Integrated Schottky Diode
- Low RDS(on)
- Low input capacitance
| 优势- Higher efficiency
- Minimize conduction losses
- Minimize switching losses
|
应用- High Performance DC-DC Converters
Point of Load
| 终端产品 |
设计和开发工具 (1)
封装图纸 (1)
仿真模型 (4)
评估板文档 (5)
数据表 (1)
评估板与开发工具
| 产品 | 状况 | Compliance | 简短说明 |
|---|
| 25VT6A5VGEVB | Intro Pending | Pb-free | T6 25V Power MOSFET Evaluation Board |
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NTMFS4H02NFT1G | Active | Pb-free
Halide free | Power MOSFET 25V 193A 1.4 mOhm Single N−Channel SO−8FL with Schottky | SO-8FL / DFN-5 | 488AA | 1 | Tape and Reel | 1500 | $1.45 |
| NTMFS4H02NFT3G | Active | Pb-free
Halide free | Power MOSFET 25V 193A 1.4 mOhm Single N−Channel SO−8FL with Schottky | SO-8FL / DFN-5 | 488AA | 1 | Tape and Reel | 5000 | $1.45 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NTMFS4H02NFT1G | N-Channel | with Schottky Diode | 25 | 20 | 2.1 | 193 | 83 | | 2.3 | 1.4 | 18.7 | | 4.3 | | 2652 | 1644 | 94 |
| NTMFS4H02NFT3G | N-Channel | with Schottky Diode | 25 | 20 | 2.1 | 193 | 83 | | 2.3 | 1.4 | 18.7 | | 4.3 | | 2652 | 1644 | 94 |
