NTMFS6B03N: Power MOSFET 100V 132A 4.8mΩ Single N−Channel SO-8FL
Power MOSFET 100V 132A 4.8mΩ Single N−Channel SO-8FL
特性- Low RDS(on)
- Low input capacitance
| 优势- Minimize conduction losses
- Minimize switching losses
|
数据表 (1)
封装图纸 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NTMFS6B03NT1G | Active | Pb-free
Halide free | Power MOSFET 100V 132A 4.8mΩ Single N−Channel SO-8FL, Power MOSFET 100 V, 4.8 mΩ, 132 A, Single N−Channel | SO-8FL / DFN-5 | 488AA | 1 | Tape and Reel | 1500 | $2.0851 |
| NTMFS6B03NT3G | Active | Pb-free
Halide free | Power MOSFET 100V 132A 4.8mΩ Single N−Channel SO-8FL, Power MOSFET 100 V, 4.8 mΩ, 132 A, Single N−Channel | SO-8FL / DFN-5 | 488AA | 1 | Tape and Reel | 5000 | $2.0851 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NTMFS6B03NT1G | N-Channel | Single | 100 | ±20 | 4 | 132 | 165 | | | 4.8 | | 58 | | 120 | 4200 | 760 | 31 |
| NTMFS6B03NT3G | N-Channel | Single | 100 | ±20 | 4 | 132 | 165 | | | 4.8 | | 58 | | 120 | 4200 | 760 | 31 |
