NTP8G202N: Power GaN Cascode Transistor 600V 290 mΩ Single N-Channel TO-220

Power GaN Cascode Transistor 600V 290 mΩ Single N-Channel TO-220

特性
  • Fast Switching
  • Extremely Low Qrr
  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-220 3 LEAD STANDARD221A-07 (30.9kB)AH
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power GaN Cascode Transistor 600 V, 290 mOhmNTP8G202N/D (107kB)0Apr, 2015
评估板文档 (4)
Document TitleDocument ID/SizeRevisionRevision Date
NCP1397GANGEVB Bill of Materials ROHS CompliantNCP1397GANGEVB_BOM_ROHS.pdf (90kB)1
NCP1397GANGEVB Gerber Layout Files (Zip Format)NCP1397GANGEVB_GERBER.zip (102kB)0
NCP1397GANGEVB SchematicNCP1397GANGEVB_SCHEMATIC.pdf (255kB)0
NCP1397GANGEVB Test ProcedureNCP1397GANGEVB_TEST_PROCEDURE.pdf (111kB)0
评估板与开发工具
产品状况Compliance简短说明
NCP1397GANGEVBActivePb-freeHigh Performance Integrated High Voltage Driver Evaluation Board
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
NTP8G202NGActivePb-free Halide freePower GaN Cascode Transistor 600V 290 mΩ Single N-Channel TO-220TO-220-3221A-071Tube150$10.881
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)rDS(on) Max @ VGS = 2.5 V (mΩ)rDS(on) Max @ VGS = 4.5 V (mΩ)rDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
NTP8G202NGN-ChannelSingle600182.359653506.22.229785263.5
Power GaN Cascode Transistor 600 V, 290 mOhm (108kB) NTP8G202N
NCP1397GANGEVB BOM ROHS NCP1397GANGEVB
NCP1397GANGEVB GERBER NCP1397GANGEVB
NCP1397GANGEVB SCHEMATIC NCP1397GANGEVB
NCP1397GANGEVB TEST PROCEDURE NCP1397GANGEVB
TO-220 3 LEAD STANDARD NTP8G206N