NTR4170N: Power MOSFET 30V 4A 55 mOhm Single N-Channel SOT-23
This is a 30 V N-Channel Power MOSFET.
特性- Leading Edge Trench Technology for Low RDS(on)
- 0.6V Low Threshold Voltage
| 优势- System Efficiency Improvement
- Low Voltage Logic Driven
|
仿真模型 (4)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| SOT-23 | 318-08 (62.5kB) | AP |
数据表 (1)
| Document Title | Document ID/Size | Revision | Revision Date |
|---|
| NTR4170N | NTR4170N/D (98.0kB) | 1 | |
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NTR4170NT1G | Active | Pb-free
Halide free | Power MOSFET 30V 4A 55 mOhm Single N-Channel SOT-23 | SOT-23-3 | 318-08 | 1 | Tape and Reel | 3000 | $0.0907 |
| NTR4170NT3G | Last Shipments | Pb-free
Halide free | Power MOSFET 30V 4A 55 mOhm Single N-Channel SOT-23 | SOT-23-3 | 318-08 | 1 | Tape and Reel | 10000 | |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NTR4170NT1G | N-Channel | Single | 30 | 12 | 1.4 | 4 | 1.25 | | 70 | 55 | 4.76 | | 1.4 | 2.9 | 432 | 53.6 | 37.1 |
