NTS2101P: Small Signal MOSFET -8V -1.4A 100 mOhm Single P-Channel SC-70

This is an 8.0 V P-Channel Power MOSFET.

特性
  • Leading Trench Technology for Low RDS(on) Extending Battery Life
  • -1.8 V Rated for Low Voltage Gate Drive
  • SC-70 Surface Mount for Small Footprint (2x2 mm)
  • Pb-Free Package is Available
应用
  • High Side Load Switch Charging Circuit Single Cell Battery Application Applications such as Cell Phones, Digital Cameras, PDAs, etc.
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
P Spice ModelNTS2101P.LIB (1.0kB)0
Saber ModelNTS2101P.SIN (1.0kB)0
Spice 2 ModelNTS2101P.SP2 (1.0kB)0
Spice 3 ModelNTS2101P.SP3 (1.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
SC-70 (SOT-323) 3 LEAD419-04 (61.1kB)N
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Small Signal MOSFET -8 V, -1.4 A, Single P Channel SC-70NTS2101P/D (61.0kB)1
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
NTS2101PT1GActivePb-free Halide freeSmall Signal MOSFET -8V -1.4A 100 mOhm Single P-Channel SC-70SC-70-3 / SOT-323-3419-041Tape and Reel3000$0.0816
NTS2101PT1ObsoleteSmall Signal MOSFET -8V -1.4A 100 mOhm Single P-Channel SC-70SC-70-3 / SOT-323-3419-041Tape and Reel3000
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)rDS(on) Max @ VGS = 2.5 V (mΩ)rDS(on) Max @ VGS = 4.5 V (mΩ)rDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
NTS2101PT1GP-ChannelSingle880.71.40.291401002106.41.59.564012082
Small Signal MOSFET -8 V, -1.4 A, Single P Channel SC-70 (61.0kB) NTS2101P
P Spice Model NTS2101P
Saber Model NTS2101P
Spice 2 Model NTS2101P
Spice 3 Model NTS2101P
SC-70 (SOT-323) 3 LEAD ESD7002