NTS2101P: Small Signal MOSFET -8V -1.4A 100 mOhm Single P-Channel SC-70
This is an 8.0 V P-Channel Power MOSFET.
特性- Leading Trench Technology for Low RDS(on) Extending Battery Life
- -1.8 V Rated for Low Voltage Gate Drive
- SC-70 Surface Mount for Small Footprint (2x2 mm)
- Pb-Free Package is Available
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应用- High Side Load Switch
Charging Circuit
Single Cell Battery Application Applications such as Cell Phones, Digital Cameras, PDAs, etc.
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仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NTS2101PT1G | Active | Pb-free
Halide free | Small Signal MOSFET -8V -1.4A 100 mOhm Single P-Channel SC-70 | SC-70-3 / SOT-323-3 | 419-04 | 1 | Tape and Reel | 3000 | $0.0816 |
| NTS2101PT1 | Obsolete | | Small Signal MOSFET -8V -1.4A 100 mOhm Single P-Channel SC-70 | SC-70-3 / SOT-323-3 | 419-04 | 1 | Tape and Reel | 3000 | |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
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| NTS2101PT1G | P-Channel | Single | 8 | 8 | 0.7 | 1.4 | 0.29 | 140 | 100 | 210 | 6.4 | | 1.5 | 9.5 | 640 | 120 | 82 |
