NUS5530MN: Integrated Dual P-Channel MOSFET with PNP Switching Transistor DFN-8
This integrated device represents a new level of safety and board-space reduction by combining the 20 V P-Channel with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered portable electronics.
特性- Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor)
- Higher Efficiency Extending Battery Life
- Logic Level Gate Drive (MOSFET)
- Performance DFN Package
- This is a Pb-Free Device
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应用- Power Management in Portable and Battery-Powered Products; i.e., Cellular and Cordless Telephones and PCMCIA Cards
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数据表 (1)
封装图纸 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NUS5530MNR2G | Active | Pb-free
Halide free | Integrated Dual P-Channel MOSFET with PNP Switching Transistor DFN-8 | DFN-8 | 506AL | 1 | Tape and Reel | 3000 | $0.4933 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
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| NUS5530MNR2G | P-Channel | Dual | 20 | 12 | 1.2 | 3.9 | 1.3 | 83 | 50 | | 9.7 | | 3.6 | | 710 | 400 | 140 |
