Automotive Power MOSFET. 100V, 58A, 18.2 mohm, Single N-Channel, D2PAK. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
特性
| 优势
|
| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| PSpice Model | NTB6412AN.LIB (1.0kB) | 0 | |
| Saber Model | NTB6412AN.SIN (1.0kB) | 0 | |
| Spice2 Model | NTB6412AN.SP2 (1.0kB) | 0 | |
| Spice3 Model | NTB6412AN.SP3 (1.0kB) | 0 |
| Document Title | Document ID/Size | Revision |
|---|---|---|
| D2PAK 2 LEAD | 418B-04 (35.3kB) | L |
| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| N-Channel Power MOSFET, 100 V, 58 A, 18.2 mOhm | NTB6412AN/D (81kB) | 2 |
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） | ||
|---|---|---|---|---|---|---|---|---|---|
| NVB6412ANT4G | Active | AEC Qualified PPAP Capable Pb-free Halide free | Power MOSFET 100V, 58A, 18.2 mohm, Single N-Channel, D2PAK., Power MOSFET 100V, 58A, 18.2 mohm, Single N-Channel, D2PAK. | D2PAK-3 | 418B-04 | 1 | Tape and Reel | 800 | $0.525 |
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NVB6412ANT4G | N-Channel | Single | 100 | 20 | 4 | 58 | 167 | 18.2 | 73 | 35 | 270 | 2700 | 400 | 150 |
