NVD4856N: Power MOSFET 25V, 89A, 4.7 mOhm, Single N-Channel, DPAK, Logic Level.

Automotive Power MOSFET. 25V, 89A, 4.7 mOhm, Single N-Channel, DPAK, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

特性
  • Low Capacitance
  • Low Rds(on)
  • Optimized Gate Charge
  • Trench Technology
  • Pb-Free
  • DC-DC Converters
  • High/Low Side Switching
优势
  • Minimize Driver Losses
  • Minimize Conduction Losses
  • Minimize Switching Losses
应用
  • VCORE
终端产品
  • Desktop PC, Graphic Cards, Game Consoles, and other computing and consumer end products
应用注释 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Description of the ON Semiconductor MOSFET ModelAND9033CN/D (175.8kB)1
封装图纸 (1)
Document TitleDocument ID/SizeRevision
DPAK 4 LEAD Single Gauge Surface Mount369AA (62.3kB)B
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelNTD4856N.LIB (1.0kB)0
Saber ModelNTD4856N.SIN (1.0kB)0
Spice2 ModelNTD4856N.SP2 (1.0kB)0
Spice3 ModelNTD4856N.SP3 (1.0kB)0
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
NVD4856NT4GActiveAEC Qualified PPAP Capable Pb-free Halide freePower MOSFET 25V, 89A, 4.7 mOhm, Single N-Channel, DPAK, Logic Level., Power MOSFET 25V, 89A, 4.7 mOhm, Single N-Channel, DPAK, Logic Level.DPAK-3369AA1Tape and Reel2500$0.3707
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)rDS(on) Max @ VGS = 2.5 V (mΩ)rDS(on) Max @ VGS = 4.5 V (mΩ)rDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
NVD4856NT4GN-ChannelSingle25202.5892.146.84.718386.682241567279
Power MOSFET, 25 V, 89 A, Single N-Channel, DPAK/IPAK (118kB) NVD4856N
EFFICIENCY SIMULATOR AND MOSFET SELECTOR FOR T6T8 rev3.5 NVD4804N
Description of the ON Semiconductor MOSFET Model NVD4804N
PSpice Model NVD4856N
Saber Model NVD4856N
Spice2 Model NVD4856N
Spice3 Model NVD4856N
DPAK 4 LEAD Single Gauge Surface Mount NVD6824NL