NVD5806N: Power MOSFET 40V, 33A, 19 mOhm, Single N-Channel, DPAK.
Automotive Power MOSFET. 40V, 33A, 19 mOhm, Single N-Channel, DPAK. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
特性- Low RDS(on)
- High Current Capability
- Avalanche Energy Specified
- Pb-Free
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应用- CCFL Backlight
DC Motor Control
Power Supply Secondary Side Synchronous Rectification
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仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NVD5806NT4G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | Power MOSFET 40V, 33A, 19 mOhm, Single N-Channel, DPAK., Power MOSFET 40V 33A 19 mOhm Single N-Channel DPAK | DPAK-3 | 369AA | 1 | Tape and Reel | 2500 | $0.2013 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
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| NVD5806NT4G | N-Channel | Single | 40 | 20 | 2.5 | 33 | 40 | | 26 | 19 | | 17 | | | 860 | 130 | 100 |
