NVD5862N: Power MOSFET 60V, 98A, 5.7 mOhm, Single N-Channel, DPAK.
Automotive Power MOSFET. 60V, 98A, 5.7 mOhm, Single N-Channel, DPAK. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
特性- Low on resistance
- High current capability
- 100% Avalanche energy tested
| 优势- Provides low conduction losses
- Provides robust load performance
- Safeguards against voltage overstress
|
应用- Auotmotive Motor Drivers
Automotive Low and High Side Drivers
| 终端产品- Automotive HVAC systems
Automotive Braking systems
|
数据表 (1)
| Document Title | Document ID/Size | Revision | Revision Date |
|---|
| NVD5862N | NVD5862N/D (106.0kB) | 0 | |
封装图纸 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NVD5862NT4G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | Power MOSFET 60V, 98A, 5.7 mOhm, Single N-Channel, DPAK. | DPAK-3 | 369C | 1 | Tape and Reel | 2500 | $0.5359 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NVD5862NT4G | N-Channel | Single | 60 | 20 | 4 | 98 | 115 | | | 5.7 | | 82 | 27 | 40 | 5050 | 500 | 300 |
