NVJD4152P: Power MOSFET 20V, 260 mΩ, Dual P-channel MOSFET with ESD protection in SC-88 package.

Automotive Power MOSFET ideal for low power applications. 20V, 260 mΩ, Dual P-channel MOSFET with ESD protection in SC-88 package. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

特性
  • AEC-Q101 qualified
  • Pb free package
  • Two P-channel FETs in a very small package
优势
  • Suitable for Automotive Applications
  • Meets ROHS requirements
  • Reduce board and module size
应用
  • Low side load switch High side load switch
终端产品
  • Automotive Infotainment Modules
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
P Spice ModelNTJD4152P.LIB (1.0kB)0
Saber ModelNTJD4152P.SIN (1.0kB)0
Spice 2 ModelNTJD4152P.SP2 (1.0kB)0
Spice 3 ModelNTJD4152P.SP3 (1.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
SC-88/SC70-6/SOT-363 6 LEAD419B-02 (62.3kB)Y
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Small Signal MOSFET, 20 V, 0.88 A, Dual P-Channel, with ESD ProtectionNTJD4152P/D (70kB)6
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
NVJD4152PT1GActiveAEC Qualified PPAP Capable Pb-free Halide freePower MOSFET 20V, 260 mΩ, Dual P-channel MOSFET with ESD protection in SC-88 package.SC-88-6 / SC-70-6 / SOT-363-6419B-021Tape and Reel3000$0.0907
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)rDS(on) Max @ VGS = 2.5 V (mΩ)rDS(on) Max @ VGS = 4.5 V (mΩ)rDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
NVJD4152PT1GP-ChannelDual20121.20.880.2725002602.20.65null1552518
Small Signal MOSFET, 20 V, 0.88 A, Dual P-Channel, with ESD Protection (70kB) NVJD4152P
P Spice Model NVJD4152P
Saber Model NVJD4152P
Spice 2 Model NVJD4152P
Spice 3 Model NVJD4152P
SC-88/SC70-6/SOT-363 6 LEAD NUF2221