NVJD4152P: Power MOSFET 20V, 260 mΩ, Dual P-channel MOSFET with ESD protection in SC-88 package.
Automotive Power MOSFET ideal for low power applications. 20V, 260 mΩ, Dual P-channel MOSFET with ESD protection in SC-88 package. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
特性- AEC-Q101 qualified
- Pb free package
- Two P-channel FETs in a very small package
| 优势- Suitable for Automotive Applications
- Meets ROHS requirements
- Reduce board and module size
|
应用- Low side load switch
High side load switch
| 终端产品- Automotive Infotainment Modules
|
仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NVJD4152PT1G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | Power MOSFET 20V, 260 mΩ, Dual P-channel MOSFET with ESD protection in SC-88 package. | SC-88-6 / SC-70-6 / SOT-363-6 | 419B-02 | 1 | Tape and Reel | 3000 | $0.0907 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NVJD4152PT1G | P-Channel | Dual | 20 | 12 | 1.2 | 0.88 | 0.272 | 500 | 260 | | 2.2 | | 0.65 | null | 155 | 25 | 18 |
