NVJD4158C: Power MOSFET 30V, 880mA, 260 mOhm, Complementary in a SC88 package.

Automotive Power MOSFET ideal for low power applications. 30V, 880mA, 260 mOhm, Complementary in a SC88 package. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

特性
  • AEC-Q101 qualified
  • Pb free
  • N- and P-channel completementary pair of FETs in one small package
优势
  • Suitable for Automotive Applications
  • Meets ROHS requirements
  • Reduced board and module size
应用
  • High Side Switch Low Side Switch
终端产品
  • Automotive Infotainment Modules
仿真模型 (1)
Document TitleDocument ID/SizeRevisionRevision Date
NTJD4158C Saber ModelNTJD4158C.SIN (4.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
SC-88/SC70-6/SOT-363 6 LEAD419B-02 (62.3kB)Y
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Small Signal MOSFET 30 V/ -20 V, +0.25/-0.88 A, Complementary, SC-88NTJD4158C/D (86kB)5
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
NVJD4158CT1GActiveAEC Qualified PPAP Capable Pb-free Halide freePower MOSFET 30V, 880mA, 260 mOhm, Complementary in a SC88 package.SC-88-6 / SC-70-6 / SOT-363-6419B-021Tape and Reel3000$0.0933
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)rDS(on) Max @ VGS = 2.5 V (mΩ)rDS(on) Max @ VGS = 4.5 V (mΩ)rDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
NVJD4158CT1GComplementaryDual30201.50.880.27250015000.90.220197.25
Small Signal MOSFET 30 V/ -20 V, +0.25/-0.88 A, Complementary, SC-88 (86kB) NVJD4158C
NTJD4158C Saber Model NVJD4158C
SC-88/SC70-6/SOT-363 6 LEAD NUF2221