Automotive Power MOSFET. This N-Channel dual device was designed with a small footprint package (2x2 mm) with ON Semiconductor's leading planar process for small footprint and increased efficiency. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
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Document Title | Document ID/Size | Revision | Revision Date |
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PSpice model | NTJD4401NT1.LIB (1.0kB) | 0 | |
Saber model | NTJD4401NT1.SIN (1.0kB) | 0 | |
Spice 2 model | NTJD4401NT1.SP2 (1.0kB) | 0 | |
Spice model 3 | NTJD4401NT1.SP3 (1.0kB) | 0 |
Document Title | Document ID/Size | Revision |
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SC-88/SC70-6/SOT-363 6 LEAD | 419B-02 (62.3kB) | Y |
Document Title | Document ID/Size | Revision | Revision Date |
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Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection | NTJD4401N/D (67kB) | 7 | May, 2015 |
产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价) | ||
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NVJD4401NT1G | Active | AEC Qualified PPAP Capable Pb-free Halide free | Power MOSFET 20V, 630mA, 375 mOhm, Dual N-Channel with ESD Protection, Logic Level., Small Signal MOSFET 20V 630mA 375 mOhm Dual N-Channel SC88 with ESD Protection | SC-88-6 / SC-70-6 / SOT-363-6 | 419B-02 | 1 | Tape and Reel | 3000 | $0.0953 |
Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
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NVJD4401NT1G | N-Channel | Dual | 20 | 12 | 1.5 | 0.63 | 0.27 | 360 | 290 | 1.3 | 0.4 | 33 | 13 | 2.8 |