NVJD5121N: Power MOSFET 60V 295mA 1.6 Ohm Dual N-Channel SC−88 with ESD Protection, Logic Level.

Automotive Power MOSFET ideal for low power applications. 60V 295mA 1.6 Ohm Dual N-Channel SC−88 with ESD Protection, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

特性
  • Pb-Free
  • AEC qualified
  • Leading Edge Trench Technology for Low RDS(on)
  • Reduced Qg and Capacitance
  • Low Leakage Current
  • Low Profile, 2x2 mm
优势
  • RoHS Compliance
  • Automotive qualified
终端产品
  • Infotainment systems. Radios. Navigation systems. Clusters
仿真模型 (2)
Document TitleDocument ID/SizeRevisionRevision Date
NTJD5121.SINNTJD5121.SIN (1.0kB)
PSpice ModelNTJD5121.LIB (1.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
SC-88/SC70-6/SOT-363 6 LEAD419B-02 (62.3kB)Y
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
NTJD5121N Dual N-Channel Power MOSFET with ESD ProtectionNTJD5121N/D (69kB)8May, 2015
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
NVJD5121NT1GActiveAEC Qualified PPAP Capable Pb-free Halide freePower MOSFET 60V 295mA 1.6 Ohm Dual N-Channel SC−88 with ESD Protection, Logic Level.SC-88-6 / SC-70-6 / SOT-363-6419B-021Tape and Reel3000$0.045
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)rDS(on) Max @ VGS = 2.5 V (mΩ)rDS(on) Max @ VGS = 4.5 V (mΩ)rDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
NVJD5121NT1GN-ChannelDual60202.50.2950.25250016000.90.28264.42.5
Dual N-Channel Power MOSFET with ESD Protection (69kB) NVJD5121N
NTJD5121.SIN NVJD5121N
PSpice Model NVJD5121N
SC-88/SC70-6/SOT-363 6 LEAD NUF2221