NVJD5121N: Power MOSFET 60V 295mA 1.6 Ohm Dual N-Channel SC−88 with ESD Protection, Logic Level.
Automotive Power MOSFET ideal for low power applications. 60V 295mA 1.6 Ohm Dual N-Channel SC−88 with ESD Protection, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
特性- Pb-Free
- AEC qualified
- Leading Edge Trench Technology for Low RDS(on)
- Reduced Qg and Capacitance
- Low Leakage Current
- Low Profile, 2x2 mm
| 优势- RoHS Compliance
- Automotive qualified
|
终端产品- Infotainment systems. Radios. Navigation systems. Clusters
|
仿真模型 (2)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NVJD5121NT1G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | Power MOSFET 60V 295mA 1.6 Ohm Dual N-Channel SC−88 with ESD Protection, Logic Level. | SC-88-6 / SC-70-6 / SOT-363-6 | 419B-02 | 1 | Tape and Reel | 3000 | $0.045 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NVJD5121NT1G | N-Channel | Dual | 60 | 20 | 2.5 | 0.295 | 0.25 | | 2500 | 1600 | 0.9 | | 0.28 | | 26 | 4.4 | 2.5 |
