NVLJD4007NZ: Power MOSFET 30V, 245mA, 7 Ohm, Dual N-Channel, WDFN6 with ESD Protection, Logic Level.

Automotive Power MOSFET. 30V 245mA 7 Ohm Dual N-Channel WDFN6 with ESD Protection, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

特性
  • Low Gate Charge
  • Small 2x2 mm Footprint
  • ESD Protected Gate
  • AEC-Q101 Qualified and PPAP Capable
  • These Devices are Pb-Free and are RoHS Compliant
  • Optimized layout for excellent high speed signal integrity
优势
  • Fast Switching
仿真模型 (2)
Document TitleDocument ID/SizeRevisionRevision Date
NVLJD4007NZ PSpice ModelNVLJD4007NZ.LIB.TXT (2.0kB)0
NVLJD4007NZ Spice3 ModelNVLJD4007NZ.SP3.TXT (2.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
WDFN6 2x2, 0.65P506AN (64.1kB)G
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
30 V 245 mA dual N-Channel Small Signal MOSFET in WDFN6 2x2 mm packageNVLJD4007NZ/D (126.0kB)0
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
NVLJD4007NZTAGActiveAEC Qualified PPAP Capable Pb-free Halide freePower MOSFET 30V, 245mA, 7 Ohm, Dual N-Channel, WDFN6 with ESD Protection, Logic Level.WDFN-6506AN1Tape and Reel3000$0.1518
NVLJD4007NZTBGActiveAEC Qualified PPAP Capable Pb-free Halide freePower MOSFET 30V, 245mA, 7 Ohm, Dual N-Channel, WDFN6 with ESD Protection, Logic Level.WDFN-6506AN1Tape and Reel3000$0.1518
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)rDS(on) Max @ VGS = 2.5 V (mΩ)rDS(on) Max @ VGS = 4.5 V (mΩ)rDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
NVLJD4007NZTAGN-ChannelDual30201.50.2450.755750070000.750.212.2103.3
NVLJD4007NZTBGN-ChannelDual30201.50.2450.755750070000.750.212.2103.3
30 V 245 mA dual N-Channel Small Signal MOSFET in WDFN6 2x2 mm package (126.0kB) NVLJD4007NZ
NVLJD4007NZ PSpice Model NVLJD4007NZ
NVLJD4007NZ Spice3 Model NVLJD4007NZ
WDFN6 2x2, 0.65P NVLJD4007NZ