Automotive Power MOSFET. NTMD6N04R2G 40V, 6.0A, Dual N-Channel SOIC-8. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
特性
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应用
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| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| NTLUS4C12N PSpice Model | PSPICE MODEL (1.0kB) | 0 | |
| NVD6820NL Saber Model | SABER MODEL (1.0kB) | 0 | |
| Spice 2 Model | SPICE 2 MODEL (1.0kB) | 0 | |
| Spice 3 Model | SPICE 3 MODEL (1.0kB) | 0 |
| Document Title | Document ID/Size | Revision |
|---|---|---|
| SOIC-8 Narrow Body | 751-07 (62.6kB) | AK |
| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| NTMD6N04R2G 40V, 6.0A, Dual N-Channel SOIC-8 | NTMD6N04R2/D (99.0kB) | 2 |
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） | ||
|---|---|---|---|---|---|---|---|---|---|
| NVMD6N04R2G | Active | AEC Qualified PPAP Capable Pb-free Halide free | Power MOSFET 40V, 4.6A, 34 mOhm, Dual N-Channel, SO-8, Logic Level., Power MOSFET 40V 4.6A 34 mOhm Dual N-Channel SO-8 | SOIC-8 | 751-07 | 1 | Tape and Reel | 2500 | $0.3943 |
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NVMD6N04R2G | N-Channel | Dual | 40 | 20 | 3 | 5.8 | 2 | 43 | 34 | 20 | 5.5 | 20 | 723 | 156 | 53 |
