Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
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Document Title | Document ID/Size | Revision | Revision Date |
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Board Mounting Notes for SO-8 Flat Lead | AND8195/D (88kB) | 2 | Jan, 2015 |
Document Title | Document ID/Size | Revision |
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DFN8 5x6, 1.27P Dual Flag (SO8FL-Dual) | 506BT (59.8kB) | E |
Document Title | Document ID/Size | Revision | Revision Date |
---|---|---|---|
Power MOSFET 40 V, 10 mOhm, 53 A, Dual N−Channel SO-8FL | NVMFD5853N/D (124.0kB) | 0 |
产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价) | ||
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NVMFD5853NT1G | Active | AEC Qualified PPAP Capable Pb-free Halide free | Power MOSFET 40V, 53A, 10 mOhm, Dual N-Channel, SO8-FL, Logic Level. | SO-8FL Dual / DFN-8 | 506BT | 1 | Tape and Reel | 1500 | $0.4738 |
NVMFD5853NWFT1G | Active | AEC Qualified PPAP Capable Pb-free Halide free | Power MOSFET 40V, 53A, 10 mOhm, Dual N-Channel, SO8-FL, Logic Level. | SO-8FL Dual / DFN-8 | 506BT | 1 | Tape and Reel | 1500 | $0.4911 |
Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
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NVMFD5853NT1G | N-Channel | Dual | 40 | 20 | 4 | 53 | 37 | 10 | 24 | 6.6 | 9 | 1225 | 1250 | 100 | |||
NVMFD5853NWFT1G | N-Channel | Dual | 40 | 20 | 4 | 53 | 37 | 10 | 24 | 6.6 | 9 | 1225 | 1250 | 100 |