NVMS5P02: Power MOSFET -20V, -5.4A, 33 mOhm, P-Channel, Logic Level
Automotive, Power MOSFET. -20V, -5.4A, 33 mOhm, Single P-Channel, SO-8, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
特性- High Density Power MOSFET with Ultra Low RDS(on) Providing Higher Efficiency
- Miniature SO-8 Surface Mount Package--Saves Board Space
- Diode Exhibits High Speed with Soft Recovery
- IDSS Specified at Elevated Temperature
- Drain-to-Source Avalanche Energy Specified
- Mounting Information for the SO-8 Package is Provided
- Pb-Free Packages are Available
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应用- Power Management in Portable and Battery-Powered Products, i.e.: Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
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仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NVMS5P02R2G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | Power MOSFET -20V, -5.4A, 33 mOhm, P-Channel, Logic Level, Power MOSFET -20V -5.4A 33 mOhm Single P-Channel SO-8 | SOIC-8 | 751-07 | 1 | Tape and Reel | 2500 | $0.3373 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NVMS5P02R2G | P-Channel | Single | 20 | 10 | 1.25 | 5.4 | 7.05 | 48 | 33 | | 20 | | 7 | 0.03 | 1375 | 510 | 200 |
