NVMS5P02: Power MOSFET -20V, -5.4A, 33 mOhm, P-Channel, Logic Level

Automotive, Power MOSFET. -20V, -5.4A, 33 mOhm, Single P-Channel, SO-8, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

特性
  • High Density Power MOSFET with Ultra Low RDS(on) Providing Higher Efficiency
  • Miniature SO-8 Surface Mount Package--Saves Board Space
  • Diode Exhibits High Speed with Soft Recovery
  • IDSS Specified at Elevated Temperature
  • Drain-to-Source Avalanche Energy Specified
  • Mounting Information for the SO-8 Package is Provided
  • Pb-Free Packages are Available
应用
  • Power Management in Portable and Battery-Powered Products, i.e.: Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
P Spice ModelNTMS5P02.LIB (1.0kB)0
Saber ModelNTMS5P02.SIN (1.0kB)0
Spice 2 ModelNTMS5P02.SP2 (1.0kB)0
Spice 3 ModelNTMS5P02.SP3 (1.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
SOIC-8 Narrow Body751-07 (62.6kB)AK
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power MOSFET -20 V, -5.4 A, Single P-Channel SO-8NTMS5P02R2/D (118.0kB)3
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
NVMS5P02R2GActiveAEC Qualified PPAP Capable Pb-free Halide freePower MOSFET -20V, -5.4A, 33 mOhm, P-Channel, Logic Level, Power MOSFET -20V -5.4A 33 mOhm Single P-Channel SO-8SOIC-8751-071Tape and Reel2500$0.3373
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)rDS(on) Max @ VGS = 2.5 V (mΩ)rDS(on) Max @ VGS = 4.5 V (mΩ)rDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
NVMS5P02R2GP-ChannelSingle20101.255.47.0548332070.031375510200
Power MOSFET -20 V, -5.4 A, Single P-Channel SO-8 (118.0kB) NVMS5P02
P Spice Model NVMS5P02
Saber Model NVMS5P02
Spice 2 Model NVMS5P02
Spice 3 Model NVMS5P02
SOIC-8 Narrow Body CM1216