Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
特性
| 优势
|
应用
| 终端产品
|
| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| EFFICIENCY SIMULATOR AND MOSFET SELECTOR FOR T6T8 rev3.5 | EFFICIENCY SIMULATOR AND MOSFET SELECTOR FOR T3 AND T6 (4250kB) | 3.5 | May, 2015 |
| TRANSIENT WAVEFORM SIMULATOR | TRANSIENT WAVEFORM SIMULATOR (2364.0kB) | 1.2.1 |
| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| 30 V, 17 mOhm, 22 A Single N-Channel u8FL Power MOSFET | NVTFS4C25N/D (87kB) | 1 |
| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| Board Mounting Notes for WDFN8 Package | AND9138/D (308kB) | 1 | May, 2015 |
| Document Title | Document ID/Size | Revision |
|---|---|---|
| WDFN8 3.3x3.3, 0.65P | 511AB (54.7kB) | D |
| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| PSpice Model | NTTFS4C25N.LIB (1.0kB) | 0 | |
| Saber Model | NVTFS4C25N.SIN (1.0kB) | 0 | |
| Spice2 Model | NTTFS4C25N.SP2 (1.0kB) | 0 | |
| Spice3 Model | NVTFS4C25N.SP3 (1.0kB) | 0 |
| Document Title | Document ID/Size | Revision | Revision Date |
|---|---|---|---|
| ONS321A5VGEVB / ONS321B12VGEVB Evaluation Board User's Manual | EVBUM2102/D (1518.0kB) | 0 | |
| ONS321A5VGEVB Bill of Materials ROHS Compliant | ONS321A5VGEVB_BOM_ROHS.PDF (76.0kB) | 0 | |
| ONS321A5VGEVB Gerber Layout Files (Zip Format) | ONS321A5VGEVB_GERBER.ZIP (250.0kB) | 0 | |
| ONS321A5VGEVB Schematic | ONS321A5VGEVB_SCHEMATIC.PDF (343.0kB) | 0 | |
| ONS321A5VGEVB Test Procedure | ONS321A5VGEVB_TEST_PROCEDURE.PDF (808.0kB) | 0 | |
| ONS321B12VGEVB Gerber Layout Files (Zip Format) | ONS321B12VGEVB_GERBER.ZIP (250.0kB) | 0 | |
| ONS321B12VGEVB Schematic | ONS321B12VGEVB_SCHEMATIC.PDF (343.0kB) | 0 | |
| ONS321B12VGEVB Test Procedure | ONS321B12VGEVB_TEST_PROCEDURE.PDF (807.0kB) | 0 |
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） | ||
|---|---|---|---|---|---|---|---|---|---|
| NVTFS4C25NTAG | Active | AEC Qualified PPAP Capable Pb-free Halide free | Power MOSFET 30V, 22A, 17 mOhm, Single N-Channel, u8FL, Logic Level. | u8FL / WDFN-8 | 511AB | 1 | Tape and Reel | 1500 | $0.1668 |
| NVTFS4C25NWFTAG | Active | AEC Qualified PPAP Capable Pb-free Halide free | Power MOSFET 30V, 22A, 17 mOhm, Single N-Channel, u8FL, Logic Level. | u8FL / WDFN-8 | 511AB | 1 | Tape and Reel | 1500 | $0.182 |
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NVTFS4C25NTAG | N-Channel | Single | 30 | 20 | 2.2 | 22.1 | 14.3 | 26.5 | 17 | 5.1 | 10.3 | 2.7 | 5.7 | 500 | 295 | 85 | |
| NVTFS4C25NWFTAG | N-Channel | Single | 30 | 20 | 2.2 | 22.1 | 14.3 | 26.5 | 17 | 5.1 | 10.3 | 2.7 | 5.7 | 500 | 295 | 85 |
