PZT651: NPN Bipolar Transistor
This NPN Bipolar Transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.
特性- High Current: 2.0 Amp
- The SOT-223 package can be soldered using wave or reflow.
- SOT-223 package ensures level mounting, resulting in improved thermalconduction, and allows visual inspection of soldered joints. The formedleads absorb thermal stress during soldering, eliminating the possibilityof damage to the die.
- PNP Complement is PZT751T1
- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
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仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| PZT651T1G | Active | AEC Qualified
Pb-free
Halide free | NPN Bipolar Transistor | SOT-223-4 / TO-261-4 | 318E-04 | 1 | Tape and Reel | 1000 | $0.304 |
| SPZT651T1G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | NPN Bipolar Transistor | SOT-223-4 / TO-261-4 | 318E-04 | 1 | Tape and Reel | 1000 | $0.3347 |
| PZT651T1 | Last Shipments | | NPN Bipolar Transistor | SOT-223-4 / TO-261-4 | 318E-04 | 1 | Tape and Reel | 1000 | |
订购产品技术参数
| Product | Polarity | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
|---|
| PZT651T1G | NPN | 2 | 60 | 40 | - | 75 | 0.8 |
| SPZT651T1G | NPN | 2 | 60 | 40 | - | 75 | 0.8 |
