This P-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This devices is suitable for applications with low gate charge driving or low on resistance requirements.
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Document Title | Document ID/Size | Revision | Revision Date |
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Power MOSFET, -60V, 62mOhm, -12A, Single P-Channel | SFT1342/D (354kB) | 2 | Sep, 2014 |
Document Title | Document ID/Size | Revision |
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DPAK / TP-FA | 369AH (55.0kB) | O |
IPAK / TP | 369AJ (51.5kB) | O |
产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价) | ||
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SFT1342-E | Active, Not Rec | Pb-free | Power MOSFET, -60V, 62mΩ, -12A, Single P-Channel | IPAK / TP | 369AJ | NA | Bulk Bag | 500 | $0.4736 |
SFT1342-TL-E | Active, Not Rec | Pb-free | Power MOSFET, -60V, 62mΩ, -12A, Single P-Channel | DPAK / TP-FA | 369AH | 1 | Tape and Reel | 700 | $0.4736 |
SFT1342-TL-W | Active | Pb-free Halide free | Power MOSFET, -60V, 62mΩ, -12A, Single P-Channel | DPAK / TP-FA | 369AH | 1 | Tape and Reel | 700 | $0.4147 |
SFT1342-W | Active | Pb-free Halide free | Power MOSFET, -60V, 62mΩ, -12A, Single P-Channel | IPAK / TP | 369AJ | NA | Bulk Bag | 500 | $0.4147 |
Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
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SFT1342-TL-W | P-Channel | Single | -60 | 20 | -2.6 | -12 | 1 | 87 | 62 | 26 | 5 | 1150 | 115 | 95 | |||
SFT1342-W | P-Channel | Single | -60 | 20 | -2.6 | -12 | 1 | 87 | 62 | 26 | 5 | 1150 | 115 | 95 |