SFT1431: Power MOSFET 35V 11A 25mOhm Single N-Channel DPAK
This N-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This devices is suitable for applications with low gate charge driving or low on resistance requirements.
特性- Low On-Resistance
- High Speed Switching
- Low Gate Charge
- ESD Diode - Protected Gate
- Pb-Free and RoHS Compliance
| 优势- Improves efficiency by reducing conduction losses
- Reduces dynamic power losses
- Ease of drive, faster turn-on
- ESD resistance
- Environment friendliness
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数据表 (1)
封装图纸 (2)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| SFT1431-E | Active, Not Rec | Pb-free | Power MOSFET 35V 11A 25mOhm Single N-Channel DPAK | IPAK / TP | 369AJ | NA | Bulk Bag | 500 | |
| SFT1431-TL-E | Active, Not Rec | Pb-free | Power MOSFET 35V 11A 25mOhm Single N-Channel DPAK | DPAK / TP-FA | 369AH | 1 | Tape and Reel | 700 | |
| SFT1431-TL-W | Active | Pb-free
Halide free | Power MOSFET 35V 11A 25mOhm Single N-Channel DPAK | DPAK / TP-FA | 369AH | 1 | Tape and Reel | 700 | $0.3733 |
| SFT1431-W | Active | Pb-free
Halide free | Power MOSFET 35V 11A 25mOhm Single N-Channel DPAK | IPAK / TP | 369AJ | NA | Bulk Bag | 500 | $0.3733 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | rDS(on) Max @ VGS = 2.5 V (mΩ) | rDS(on) Max @ VGS = 4.5 V (mΩ) | rDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| SFT1431-TL-W | N-Channel | Single | 35 | 20 | 2.6 | 11 | 1 | | 39.5 | 25 | | 17.3 | 3.6 | | 960 | 130 | 84 |
| SFT1431-W | N-Channel | Single | 35 | 20 | 2.6 | 11 | 1 | | 39.5 | 25 | | 17.3 | 3.6 | | 960 | 130 | 84 |
