SFT1431: Power MOSFET 35V 11A 25mOhm Single N-Channel DPAK

This N-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This devices is suitable for applications with low gate charge driving or low on resistance requirements.

特性
  • Low On-Resistance
  • High Speed Switching
  • Low Gate Charge
  • ESD Diode - Protected Gate
  • Pb-Free and RoHS Compliance
优势
  • Improves efficiency by reducing conduction losses
  • Reduces dynamic power losses
  • Ease of drive, faster turn-on
  • ESD resistance
  • Environment friendliness
应用
  • FAN Motor, SMPS, DC/DC
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power MOSFET, 35V, 25mOhm, 11A, Single N-ChannelSFT1431/D (356kB)2Sep, 2014
封装图纸 (2)
Document TitleDocument ID/SizeRevision
DPAK / TP-FA369AH (55.0kB)O
IPAK / TP369AJ (51.5kB)O
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
SFT1431-EActive, Not RecPb-freePower MOSFET 35V 11A 25mOhm Single N-Channel DPAKIPAK / TP369AJNABulk Bag500
SFT1431-TL-EActive, Not RecPb-freePower MOSFET 35V 11A 25mOhm Single N-Channel DPAKDPAK / TP-FA369AH1Tape and Reel700
SFT1431-TL-WActivePb-free Halide freePower MOSFET 35V 11A 25mOhm Single N-Channel DPAKDPAK / TP-FA369AH1Tape and Reel700$0.3733
SFT1431-WActivePb-free Halide freePower MOSFET 35V 11A 25mOhm Single N-Channel DPAKIPAK / TP369AJNABulk Bag500$0.3733
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)rDS(on) Max @ VGS = 2.5 V (mΩ)rDS(on) Max @ VGS = 4.5 V (mΩ)rDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
SFT1431-TL-WN-ChannelSingle35202.611139.52517.33.696013084
SFT1431-WN-ChannelSingle35202.611139.52517.33.696013084
Power MOSFET, 35V, 25mOhm, 11A, Single N-Channel (356kB) SFT1431
DPAK / TP-FA SFT1452
IPAK / TP SFT1452