SiC Power Module - BSM120D12P2C005

Half bridge module consisting of ROHM SiC-DMOSFETs and SiC-SBDs. BSM120D12P2C005 。

Part NumberStatusPackageUnit QuantityMinimum Package QuantityPacking TypeRoHS
BSM120D12P2C005ActiveC1212TrayYes

BSM120D12P2C005 Data Sheet

Specifications
Drain-source Voltage[V]1200
Drain Current[A]120.0
Total Power Dissipation[W]780
Junction Temperature(Max.)[°C]150
Storage Temperature (Min.)[°C]-40
Storage Temperature (Max.)[°C]125
Technical Documents
Pin Configuration
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BSM120D12P2C005 BSM120D12P2C005
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SCS308AP SCS308AP
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SCT3022AL SCT3022AL
SPICE Simulation Evaluation Circuit BSM120D12P2C005
Spice Model (lib) BSM120D12P2C005
Thermal Model (lib) BSM120D12P2C005
使用手册 SCS240KE2
NE 手册系列 SCS240KE2
产品目录 SCS240KE2
Product Catalog File BSM120D12P2C005
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