SiC Power Module - BSM120D12P2C005

Half bridge module consisting of ROHM SiC-DMOSFETs and SiC-SBDs. BSM120D12P2C005 。

Part NumberStatusPackageUnit QuantityMinimum Package QuantityPacking TypeRoHS
BSM120D12P2C005ActiveC1212TrayYes

BSM120D12P2C005 Data Sheet

Specifications
Drain-source Voltage[V]1200
Drain Current[A]120.0
Total Power Dissipation[W]780
Junction Temperature(Max.)[°C]150
Storage Temperature (Min.)[°C]-40
Storage Temperature (Max.)[°C]125
Technical Documents
Pin Configuration
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BSM120D12P2C005 BSM120D12P2C005
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SCS308AP SCS308AP
SCS310AP SCS310AP
SCT3017AL SCT3017AL
SCT3022AL SCT3022AL
SPICE Simulation Evaluation Circuit BSM120D12P2C005
Spice Model (lib) BSM120D12P2C005
Thermal Model (lib) BSM120D12P2C005
使用手册 SCS240KE2
NE 手册系列 SCS240KE2
产品目录 SCS240KE2
Product Catalog File BSM120D12P2C005
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