SiC Power Module - BSM180D12P2C101

Half bridge module consisting of ROHM SiC-DMOSFETs.

Part NumberStatusPackageUnit QuantityMinimum Package QuantityPacking TypeRoHS
BSM180D12P2C101ActiveC1212TrayYes

BSM180D12P2C101 Data Sheet

Specifications
Drain-source Voltage[V]1200
Drain Current[A]180.0
Total Power Dissipation[W]1130
Junction Temperature(Max.)[°C]150
Storage Temperature (Min.)[°C]-40
Storage Temperature (Max.)[°C]125
Technical Documents
Pin Configuration
Related Product
PART NUMBERProduct SeriesDatasheet
S4002SiC MOSFET Bare DieDatasheet
SCS306APSiC Schottky Barrier DiodesDatasheet
SCS308APSiC Schottky Barrier DiodesDatasheet
SCS310APSiC Schottky Barrier DiodesDatasheet
SCT3017ALSiC MOSFETDatasheet
SCT3022ALSiC MOSFETDatasheet
BSM180D12P2C101 BSM180D12P2C101
SCS306AP SCS306AP
SCS308AP SCS308AP
SCS310AP SCS310AP
SCT3017AL SCT3017AL
SCT3022AL SCT3022AL
SPICE Simulation Evaluation Circuit BSM180D12P2C101
Spice Model (lib) BSM180D12P2C101
Thermal Model (lib) BSM180D12P2C101
使用手册 SCS240KE2
NE 手册系列 SCS240KE2
产品目录 SCS240KE2
Product Catalog File BSM180D12P2C101
Products 产品服务
Manufacturers 生产厂家
Sales 联系购买
©1993 - 2024 BDTIC