SiC Power Module - BSM180D12P2C101

Half bridge module consisting of ROHM SiC-DMOSFETs.

Part NumberStatusPackageUnit QuantityMinimum Package QuantityPacking TypeRoHS
BSM180D12P2C101ActiveC1212TrayYes

BSM180D12P2C101 Data Sheet

Specifications
Drain-source Voltage[V]1200
Drain Current[A]180.0
Total Power Dissipation[W]1130
Junction Temperature(Max.)[°C]150
Storage Temperature (Min.)[°C]-40
Storage Temperature (Max.)[°C]125
Technical Documents
Pin Configuration
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BSM180D12P2C101 BSM180D12P2C101
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SCS308AP SCS308AP
SCS310AP SCS310AP
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SPICE Simulation Evaluation Circuit BSM180D12P2C101
Spice Model (lib) BSM180D12P2C101
Thermal Model (lib) BSM180D12P2C101
使用手册 SCS240KE2
NE 手册系列 SCS240KE2
产品目录 SCS240KE2
Product Catalog File BSM180D12P2C101
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