SiC Power Module - BSM300D12P2E001
BSM300D12P2E001 is a half bridge module consisting of Silicon Carbide DMOSFET and Silicon Carbide Schottky Barrier Diode.
| Part Number | Status | Package | Unit Quantity | Minimum Package Quantity | Packing Type | RoHS |
|---|
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| BSM300D12P2E001 | Active | E | 4 | 4 | Tray | Yes |
BSM300D12P2E001 Data Sheet
Specifications| Drain-source Voltage[V] | 1200 | | Drain Current[A] | 300.0 | | Total Power Dissipation[W] | 1875 | | Junction Temperature(Max.)[°C] | 175 | | Storage Temperature (Min.)[°C] | -40 | | Storage Temperature (Max.)[°C] | 125 |
| Technical DocumentsFeatures- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
|
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