-20V Pch+Pch Middle Power MOSFET - QH8JA1

The Middle Power MOSFET QH8JA1 is suitable for switching applications.

Part NumberStatusPackageUnit QuantityMinimum Package QuantityPacking TypeRoHS
QH8JA1TCRActiveTSMT830003000TapingYes

QH8JA1 Data Sheet

Specifications
GradeStandard
Package CodeTSMT8
Package Size[mm]3.0x2.8(t=0.8)
Number of terminal8
PolarityPch+Pch
Drain-Source Voltage VDSS[V]-20
Drain Current ID[A]-5.0
RDS(on)[Ω] VGS=1.8V (Typ.)0.049
RDS(on)[Ω] VGS=2.5V (Typ.)0.035
RDS(on)[Ω] VGS=4.5V (Typ.)0.028
RDS(on)[Ω] VGS=Drive (Typ.)0.049
Total gate charge Qg[nC]10.2
Power Dissipation (PD)[W]1.5
Drive Voltage[V]-1.8
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
Technical Documents
Features
  • Low on - resistance.
  • Small surface mount package (TSMT8).
  • -1.8V Drive.
  • Pb-free lead plating; RoHS compliant
Pin Configuration
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QH8JA1 QH8JA1
DTA113ZCAHZG DTA113ZCAHZG
DTA114TCAHZG DTA114TCAHZG
DTA114YCAHZG DTA114YCAHZG
Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1