电界効果晶体管的MOSFET。提供通过采用细微流程的「超低阻值的设备 」而在广泛领域得以应用的功率MOSFET，并且结合用途，以多样的小型高功率复合型的产品线对应多种市场需求。

技术特性 Grade Standard Package Code TO-220FM Package Size[mm] 15.1x10.1 (t=4.6) Number of terminal 3 Polarity Nch Drain-Source Voltage VDSS[V] 250 Drain Current ID[A] 22.0 RDS(on)[Ω] VGS=10V (Typ.) 0.105 RDS(on)[Ω] VGS=Drive (Typ.) 0.105 Total gate charge Qg[nC] 60.0 Power Dissipation (PD)[W] 40.0 Drive Voltage[V] 10.0 Mounting Style Leaded type Storage Temperature (Min.)[°C] -55 Storage Temperature (Max.)[°C] 150

技术支持资料下载 Spice Model (lib) Thermal Model (lib) Package Information Part Explanation Taping Specifications Condition Of Soldering Storage Conditions Reliability Information Operation Notes Operation Notes NE Handbook Series 产品特点 10V驱动型 Nch 功率MOSFET 引脚配置图

RCX220N25 RCX220N25

DTA113ZCAHZG DTA113ZCAHZG

DTA114TCAHZG DTA114TCAHZG

DTA114YCAHZG DTA114YCAHZG

Spice Model (lib) RCX220N25

Thermal Model (lib) RCX220N25

Package Information VT6M1

Taping Specifications VT6M1

Condition Of Soldering RCX700N20

Storage Conditions VT6M1

Reliability Information RCX700N20

Operation Notes VT6M1

Operation Notes VT6M1

Part Explanation VT6M1

NE Handbook Series RYU002N05