电界効果晶体管的MOSFET。提供通过采用细微流程的「超低阻值的设备 」而在广泛领域得以应用的功率MOSFET,并且结合用途,以多样的小型高功率复合型的产品线对应多种市场需求。

型号Status封装包装数量最小独立包装数量包装形态RoHS数据手册
RCX330N25ActiveTO-220FM500100BulkYesRCX330N25
技术特性
GradeStandard
Package CodeTO-220FM
Package Size[mm]15.1x10.1 (t=4.6)
Number of terminal3
PolarityNch
Drain-Source Voltage VDSS[V]250
Drain Current ID[A]33.0
RDS(on)[Ω] VGS=10V (Typ.)0.077
RDS(on)[Ω] VGS=Drive (Typ.)0.077
Total gate charge Qg[nC]80.0
Power Dissipation (PD)[W]40.0
Drive Voltage[V]10.0
Mounting StyleLeaded type
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
技术支持资料下载
产品特点
  • 10V驱动型 Nch 功率MOSFET
引脚配置图
RCX330N25 RCX330N25
DTA113ZCAHZG DTA113ZCAHZG
DTA114TCAHZG DTA114TCAHZG
DTA114YCAHZG DTA114YCAHZG
Spice Model (lib) RCX330N25
Thermal Model (lib) RCX330N25
Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering RCX700N20
Storage Conditions VT6M1
Reliability Information RCX700N20
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
NE Handbook Series ZDX100N60