4V Drive Nch MOSFET (Corresponds to AEC-Q101) - RHU002N06FRA

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.

Part NumberStatusPackageUnit QuantityMinimum Package QuantityPacking TypeRoHS
RHU002N06FRAT106ActiveUMT330003000TapingYes

RHU002N06FRA Data Sheet

Specifications
GradeAutomotive
Common StandardAEC-Q101
Package CodeSOT-323
JEITA PackageSC-70
Package Size[mm]2.0x2.1(t=0.9)
Number of terminal3
PolarityNch
Drain-Source Voltage VDSS[V]60
Drain Current ID[A]0.2
RDS(on)[Ω] VGS=4V(Typ.)2.8
RDS(on)[Ω] VGS=10V(Typ.)1.7
RDS(on)[Ω] VGS=Drive (Typ.)2.8
Total gate charge Qg[nC]2.2
Power Dissipation (PD)[W]0.2
Drive Voltage[V]4.0
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
Technical Documents
Pin Configuration
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RHU002N06FRA RHU002N06FRA
DTA113ZCAHZG DTA113ZCAHZG
DTA114TCAHZG DTA114TCAHZG
DTA114YCAHZG DTA114YCAHZG
Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
NE Handbook Series RYU002N05