Pch -20V -30A Middle Power MOSFET - RQ3C150BC

The Middle Power MOSFET RQ3C150BC is suitable for switching and load switch.

Part NumberStatusPackageUnit QuantityMinimum Package QuantityPacking TypeRoHS
RQ3C150BCTBUnder DevelopmentHSMT830003000TapingYes

RQ3C150BC Data Sheet

Specifications
GradeStandard
Package CodeHSMT8(3.3x3.3)
Package Size[mm]3.3x3.3(t=0.8)
Number of terminal8
PolarityPch
Drain-Source Voltage VDSS[V]-20
Drain Current ID[A]-30.0
RDS(on)[Ω] VGS=1.8V (Typ.)0.0088
RDS(on)[Ω] VGS=2.5V (Typ.)0.0061
RDS(on)[Ω] VGS=4.5V (Typ.)0.0048
RDS(on)[Ω] VGS=Drive (Typ.)0.0088
Total gate charge Qg[nC]60.0
Power Dissipation (PD)[W]20.0
Drive Voltage[V]-1.8
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
Technical Documents
Features
  • Low on - resistance.
  • High Power Package (HSMT8).
  • Pb-free lead plating; RoHS compliant.
  • Halogen Free
Pin Configuration
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RQ3C150BC RQ3C150BC
DTA113ZCAHZG DTA113ZCAHZG
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DTA114YCAHZG DTA114YCAHZG
Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
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