Nch 30V 7A Middle Power MOSFET - RQ3E070BN _ BDTIC a Leading Distributor in China

Nch 30V 7A Middle Power MOSFET - RQ3E070BN

RQ3E070BN is high power package(HSMT8) MOSFET for switching application.

Part Number	Status	Package	Unit Quantity	Minimum Package Quantity	Packing Type	RoHS
RQ3E070BNTB	Active	HSMT8	3000	3000	Taping	Yes

RQ3E070BN Data Sheet

Specifications

Grade	Standard
Package Code	HSMT8(3.3x3.3)
Package Size[mm]	3.3x3.3(t=0.8)
Number of terminal	8
Polarity	Nch
Drain-Source Voltage VDSS[V]	30
Drain Current ID[A]	7.0
RDS(on)[Ω] VGS=4.5V (Typ.)	0.029
RDS(on)[Ω] VGS=10V (Typ.)	0.02
RDS(on)[Ω] VGS=Drive (Typ.)	0.029
Total gate charge Qg[nC]	4.6
Power Dissipation (PD)[W]	2.0
Drive Voltage[V]	4.5
Mounting Style	Surface mount
Storage Temperature (Min.)[°C]	-55
Storage Temperature (Max.)[°C]	150

Applications

Surveillance Camera for Network

Technical Documents

Pin Configuration

RQ3E070BN

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RQ3E070BN RQ3E070BN

DTA113ZCAHZG DTA113ZCAHZG

DTA114TCAHZG DTA114TCAHZG

DTA114YCAHZG DTA114YCAHZG

Spice Model (lib) RQ3E070BN

Thermal Model (lib) RQ3E070BN

Package Information VT6M1

Taping Specifications VT6M1

Condition Of Soldering VT6M1

Storage Conditions VT6M1

Operation Notes VT6M1

Operation Notes VT6M1

Part Explanation VT6M1

NE Handbook Series ZDS020N60

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