Nch 30V 8A Middle Power MOSFET - RQ3E080BN

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Part NumberStatusPackageUnit QuantityMinimum Package QuantityPacking TypeRoHS
RQ3E080BNTBActiveHSMT830003000TapingYes

RQ3E080BN Data Sheet

Specifications
GradeStandard
Package CodeHSMT8(3.3x3.3)
Package Size[mm]3.3x3.3(t=0.8)
Number of terminal8
PolarityNch
Drain-Source Voltage VDSS[V]30
Drain Current ID[A]8.0
RDS(on)[Ω] VGS=4.5V (Typ.)0.016
RDS(on)[Ω] VGS=10V (Typ.)0.011
RDS(on)[Ω] VGS=Drive (Typ.)0.016
Total gate charge Qg[nC]7.2
Power Dissipation (PD)[W]2.0
Drive Voltage[V]4.5
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
Applications
  • Surveillance Camera for Network
Technical Documents
Features
  • Low on - resistance.
  • High Power Package (HSMT8).
  • Pb-free lead plating; RoHS compliant.
  • Halogen Free
Pin Configuration
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RQ3E080BN RQ3E080BN
DTA113ZCAHZG DTA113ZCAHZG
DTA114TCAHZG DTA114TCAHZG
DTA114YCAHZG DTA114YCAHZG
Spice Model (lib) RQ3E080BN
Thermal Model (lib) RQ3E080BN
Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
NE Handbook Series ZDS020N60