Nch 30V 10A Middle Power MOSFET - RQ3E100BN

RQ3E100BN is high power package(HSMT8) MOSFET for switching.

Part NumberStatusPackageUnit QuantityMinimum Package QuantityPacking TypeRoHS
RQ3E100BNTBActiveHSMT830003000TapingYes

RQ3E100BN Data Sheet

Specifications
GradeStandard
Package CodeHSMT8(3.3x3.3)
Package Size[mm]3.3x3.3(t=0.8)
Number of terminal8
PolarityNch
Drain-Source Voltage VDSS[V]30
Drain Current ID[A]13.5
RDS(on)[Ω] VGS=4.5V (Typ.)0.011
RDS(on)[Ω] VGS=10V (Typ.)0.0077
RDS(on)[Ω] VGS=Drive (Typ.)0.011
Total gate charge Qg[nC]10.5
Power Dissipation (PD)[W]15.0
Drive Voltage[V]4.5
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
Applications
  • Surveillance Camera for Network
Technical Documents
Features
  • Low on - resistance.
  • High Power Package (HSMT8).
  • Pb-free lead plating; RoHS compliant.
  • Halogen Free
Pin Configuration
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RQ3E100BN RQ3E100BN
DTA113ZCAHZG DTA113ZCAHZG
DTA114TCAHZG DTA114TCAHZG
DTA114YCAHZG DTA114YCAHZG
Spice Model (lib) RQ3E100BN
Thermal Model (lib) RQ3E100BN
Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
NE Handbook Series RQ5E035BN
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