Nch 40V 10A Power MOSFET - RQ3G100GN
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| Part Number | Status | Package | Unit Quantity | Minimum Package Quantity | Packing Type | RoHS |
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| RQ3G100GNTB | Active | HSMT8 | 3000 | 3000 | Taping | Yes |
RQ3G100GN Data Sheet
Specifications| Grade | Standard | | Package Code | HSMT8(3.3x3.3) | | Package Size[mm] | 3.3x3.3(t=0.8) | | Number of terminal | 8 | | Polarity | Nch | | Drain-Source Voltage VDSS[V] | 40 | | Drain Current ID[A] | 10.0 | | RDS(on)[Ω] VGS=10V (Typ.) | 0.011 | | RDS(on)[Ω] VGS=Drive (Typ.) | 0.0141 | | Total gate charge Qg[nC] | 4.3 | | Power Dissipation (PD)[W] | 2.0 | | Drive Voltage[V] | 4.5 | | Mounting Style | Surface mount | | Storage Temperature (Min.)[°C] | -55 | | Storage Temperature (Max.)[°C] | 150 |
| Technical DocumentsPin Configuration |
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