SiC MOSFET - SCT2080KE
This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.
| Part Number | Status | Package | Unit Quantity | Minimum Package Quantity | Packing Type | RoHS |
|---|
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| SCT2080KEC | Active | TO-247 | 360 | 30 | Tube | Yes |
SCT2080KE Data Sheet
Specifications| Drain-source Voltage[V] | 1200 | | Drain-source On-state Resistance(Typ.)[mΩ] | 80 | | Drain Current[A] | 40.0 | | Total Power Dissipation[W] | 262 | | Junction Temperature(Max.)[°C] | 175 | | Storage Temperature (Min.)[°C] | -55 | | Storage Temperature (Max.)[°C] | 175 |
| Technical DocumentsPin Configuration |
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