SiC MOSFET - SCT2080KE

This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.

Part NumberStatusPackageUnit QuantityMinimum Package QuantityPacking TypeRoHS
SCT2080KECActiveTO-24736030TubeYes

SCT2080KE Data Sheet

Specifications
Drain-source Voltage[V]1200
Drain-source On-state Resistance(Typ.)[mΩ]80
Drain Current[A]40.0
Total Power Dissipation[W]262
Junction Temperature(Max.)[°C]175
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]175
Technical Documents
Pin Configuration
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