SiC MOSFET - SCT2120AF

650V 29A N-channel SiC power MOSFET

Part NumberStatusPackageUnit QuantityMinimum Package QuantityPacking TypeRoHS
SCT2120AFCActiveTO-220AB100050TubeYes

SCT2120AF Data Sheet

Specifications
Drain-source Voltage[V]650
Drain-source On-state Resistance(Typ.)[mΩ]120
Drain Current[A]29.0
Total Power Dissipation[W]165
Junction Temperature(Max.)[°C]175
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]175
Technical Documents
Pin Configuration
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