SiC MOSFET - SCT2H12NZ
1700V 3.7A N-channel SiC (Silicon Carbide) power MOSFET. SCT2H12NZ(1700V SiC-MOSFET) and BD7682FJ-LB(AC/DC Converter IC) Evaluation Board,
SCT2H12NZ 。
| Part Number | Status | Package | Unit Quantity | Minimum Package Quantity | Packing Type | RoHS |
|---|
|
| SCT2H12NZGC11 | Active | TO-3PFM | 450 | 30 | Tube | Yes |
SCT2H12NZ Data Sheet
Specifications| Drain-source Voltage[V] | 1700 | | Drain-source On-state Resistance(Typ.)[mΩ] | 1150 | | Drain Current[A] | 3.7 | | Total Power Dissipation[W] | 35 | | Junction Temperature(Max.)[°C] | 175 | | Storage Temperature (Min.)[°C] | -55 | | Storage Temperature (Max.)[°C] | 175 |
| Technical DocumentsFeatures- Low on-resistance
- Fast switching speed
- Long creepage distance
- Simple to drive
- Pb-free lead plating; RoHS compliant
|
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