N-channel Silicon Carbide Power MOSFET - SCT3080KL
SCT3080KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
| Part Number | Status | Package | Unit Quantity | Minimum Package Quantity | Packing Type | RoHS |
|---|
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| SCT3080KLC11 | Active | TO-247N | 450 | 30 | Tube | Yes |
SCT3080KL Data Sheet
Specifications| Drain-source Voltage[V] | 1200 | | Drain-source On-state Resistance(Typ.)[mΩ] | 80 | | Drain Current[A] | 31.0 | | Total Power Dissipation[W] | 165 | | Junction Temperature(Max.)[°C] | 175 | | Storage Temperature (Min.)[°C] | -55 | | Storage Temperature (Max.)[°C] | 175 |
| Technical Documents |
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