N-channel Silicon Carbide Power MOSFET - SCT3160KL
SCT3160KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
| Part Number | Status | Package | Unit Quantity | Minimum Package Quantity | Packing Type | RoHS |
|---|
|
| SCT3160KLC11 | Active | TO-247N | 450 | 30 | Tube | Yes |
SCT3160KL Data Sheet
Specifications| Drain-source Voltage[V] | 1200 | | Drain-source On-state Resistance(Typ.)[mΩ] | 160 | | Drain Current[A] | 17.0 | | Total Power Dissipation[W] | 103 | | Junction Temperature(Max.)[°C] | 175 | | Storage Temperature (Min.)[°C] | -55 | | Storage Temperature (Max.)[°C] | 175 |
| Technical Documents |
Related Product
