1.5V Drive Pch+SBD MOSFET - TT8U2

ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.

Part NumberStatusPackageUnit QuantityMinimum Package QuantityPacking TypeRoHS
TT8U2TRActiveTSST830003000TapingYes

TT8U2 Data Sheet

Specifications
GradeStandard
Package CodeTSST8
Package Size[mm]3.0x1.9(t=0.8)
Number of terminal8
PolarityPch+Schottky
Drain-Source Voltage VDSS[V]-20
Drain Current ID[A]-2.4
RDS(on)[Ω] VGS=1.5V (Typ.)0.18
RDS(on)[Ω] VGS=2.5V (Typ.)0.105
RDS(on)[Ω] VGS=4.5V (Typ.)0.08
RDS(on)[Ω] VGS=Drive (Typ.)0.18
Total gate charge Qg[nC]6.7
Power Dissipation (PD)[W]1.0
Drive Voltage[V]-1.5
Reverse voltage VR (Diode) [V]20.0
Forward Current IF (Diode) [A]1.0
Forward Current Surge Peak IFSM (Diode) [A]3.0
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
Applications
  • POS (Point Of Sales System)
Technical Documents
Pin Configuration
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TT8U2 TT8U2
DTA113ZCAHZG DTA113ZCAHZG
DTA114TCAHZG DTA114TCAHZG
DTA114YCAHZG DTA114YCAHZG
Spice Model (lib) TT8U2
Thermal Model (lib) TT8U2
Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Reliability Information TT8U2
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
NE Handbook Series TT8U2