NPN Low VCE(sat) Transistor + Schottky Barrier Diode - US5L12
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| Part Number | Status | Package | Unit Quantity | Minimum Package Quantity | Packing Type | RoHS |
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| US5L12TR | Active | TUMT5 | 3000 | 3000 | Taping | Yes |
US5L12 Data Sheet
Specifications| Grade | Standard | | Package Code | SOT-353T | | JEITA Package | SC-113CA | | Package Size[mm] | 2.0x2.1(t=0.85Max.) | | Number of terminal | 5 | | Polarity | NPN+Di | | Collector-Emitter voltage VCEO1[V] | 30.0 | | Collector current(continuous) IC1[A] | 1.0 | | Collector Power dissipation PC[W] | 0.4 | | hFE | 270 to 680 | | hFE (Min.) | 270 | | hFE (Max.) | 680 | | hFE (Diode) | 25 | | Reverse voltage VR (Diode) [V] | 20.0 | | Forward Current IF (Diode) [A] | 0.7 | | Forward Current Surge Peak IFSM (Diode) [A] | 3.0 | | Mounting Style | Surface mount | | Equivalent (Single Part) | 2SB1689 / RB461F | | Storage Temperature (Min.)[°C] | -40 | | Storage Temperature (Max.)[°C] | 125 |
| Technical DocumentsPin Configuration |
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