NPN Low VCE(sat) Transistor + Schottky Barrier Diode - US5L12

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.

Part NumberStatusPackageUnit QuantityMinimum Package QuantityPacking TypeRoHS
US5L12TRActiveTUMT530003000TapingYes

US5L12 Data Sheet

Specifications
GradeStandard
Package CodeSOT-353T
JEITA PackageSC-113CA
Package Size[mm]2.0x2.1(t=0.85Max.)
Number of terminal5
PolarityNPN+Di
Collector-Emitter voltage VCEO1[V]30.0
Collector current(continuous) IC1[A]1.0
Collector Power dissipation PC[W]0.4
hFE270 to 680
hFE (Min.)270
hFE (Max.)680
hFE (Diode)25
Reverse voltage VR (Diode) [V]20.0
Forward Current IF (Diode) [A]0.7
Forward Current Surge Peak IFSM (Diode) [A]3.0
Mounting StyleSurface mount
Equivalent (Single Part)2SB1689 / RB461F
Storage Temperature (Min.)[°C]-40
Storage Temperature (Max.)[°C]125
Technical Documents
Pin Configuration
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US5L12 US5L12
DTA113ZCAHZG DTA113ZCAHZG
DTA114TCAHZG DTA114TCAHZG
DTA114YCAHZG DTA114YCAHZG
Spice Model (lib) US5L12
Thermal Model (lib) US5L12
Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Reliability Information US5L12
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
NE Handbook Series US5L12