2STN2540:Low voltage fast-switching PNP power bipolar transistor

The device in a PNP transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

Key Features

  • Very low collector-emitter saturation voltage
  • Fast switching speed
  • High current gain characteristic
  • Surface mounting device in medium power SOT-223 package
Product Specifications
DescriptionVersionSize
DS4952: Low voltage fast-switching PNP power bipolar transistor3.3199 KB
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
2STN2540SOT-223Tape And Reel0.165500NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
2STN2540SOT-223IndustrialEcopack2md_ll-wspc-sot-wspc-223_csll-wspc-bi18t6f.pdf
md_ll-wspc-sot-wspc-223_csll-wspc-bi18t6f.xml
Low voltage fast-switching PNP power bipolar transistor 2STN2540
md_ll-wspc-sot-wspc-223_csll-wspc-bi18t6f.pdf 2STN2540
md_ll-wspc-sot-wspc-223_csll-wspc-bi18t6f.xml 2STN2540