LET20030C：30W 28V 2GHz LDMOS TRANSISTOR
The LET20030C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2 GHz. The LET20030C is designed for high gain and broadband performance operating in common source mode at 36 V. It is ideal for base station applications requiring high linearity.
Key Features
- Excellent thermal stability
- Common source configuration
- POUT
(@28 V) = 45 W with 13.9 dB gain @ 2000 MHz
- POUT
(@36 V) = 53 W with 13.3 dB gain @ 2000 MHz
- BeO free package
- In compliance with the 2002/95/EC European directive
Product Specifications
Application Notes
Presentations
Flyers
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| STSW-RFMOS001 | ST | Mismatch analysis for RF transistor circuits based on Agilent ADS |
| STSW-RFMOS002 | ST | Large signal load stability for RF transistors based on Agilnet ADS |
Sample & Buy
| Part Number | Quantity | Unit Price (US$)
* | Package | Packing Type | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| LET20030C | 1000 | 50.102 | M243 | Loose Piece | NEC | EAR99 | MOROCCO |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| LET20030C | M243 | Industrial | Ecopack1 | |
