LET9070FB：70W 28V HF to 2GHz LDMOS TRANSISTOR
The LET9070FB is a common source N-channel enhancement mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9070FB is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity.
Key Features
- Excellent thermal stability
- Common source configuration
- POUT (@ 28 V)= 70 W with 16 dB gain @ 945 MHz
- BeO free package
- In compliance with the 2002/95/EC European directive
- Bidirectional ESD
Product Specifications
Application Notes
Software Development Tools
| Part Number | Manufacturer | Description |
|---|
| STSW-RFMOS001 | ST | Mismatch analysis for RF transistor circuits based on Agilent ADS |
| STSW-RFMOS002 | ST | Large signal load stability for RF transistors based on Agilnet ADS |
Sample & Buy
| Part Number | Quantity | Unit Price (US$)
* | Package | Packing Type | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| LET9070FB | - | - | M250 | Loose Piece | NEC | EAR99 | MOROCCO |
Quality & Reliability
| Part Number | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| LET9070FB | M250 | Industrial | Ecopack1 | |
