MJD112:COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

The devices are manufactured in planar technology with \"base island\" layout and monolithic Darlington configuration.

Key Features

  • Good hFE linearity
  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
  • High fT frequency
Product Specifications
DescriptionVersionSize
DS0776: Complementary power Darlington transistors3.2379 KB
Sample & Buy
Part NumberPackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
MJD112T4DPAKTape And Reel0.25500NECEAR99CHINA
Quality & Reliability
Part NumberPackageGradeRoHS Compliance GradeMaterial Declaration**
MJD112T4DPAKIndustrialEcopack2md_dp-wspc-to-wspc-252-wspc-dpak_smdp-wspc-bb02s6f.pdf
md_dp-wspc-to-wspc-252-wspc-dpak_smdp-wspc-bb02s6f.xml
Complementary power Darlington transistors MJD112
md_dp-wspc-to-wspc-252-wspc-dpak_smdp-wspc-bb02s6f.pdf MJD112
md_dp-wspc-to-wspc-252-wspc-dpak_smdp-wspc-bb02s6f.xml MJD112